Lan Fu is a Fellow in the Department of Electronic Materials Engineering, ANU Research School of Physics and Engineering. Her research interests are mainly focussed on compound semiconductor materials and optoelectronic/photovoltaic devices, including:
- epitaxial growth (MOCVD), processing and characterisation of low dimensional III-V semiconductor structures such as quantum wells, quantum dots, nanowires
- design, fabrication and characterisation of low-dimensional III-V semiconductor structure based optoelectronic/photovoltaic devices, such as lasers, photodetectors, and solar cells
- application of various postgrowth material processing techniques (such as ion implantation) for modification and integration of optoelectronic devices
- nanofabrication and characterisation for nanowire based optoelectronic/photovoltaic devices
Some recent publications:
Electron-hole recombination properties of InGaAs/GaAs quantum dot solar cells and the influence on the open circuit voltage
G. Jolley, H. F. Lu, L. Fu, H. H. Tan, and C. Jagadish
Applied Physics Letters 97, 123505 (2010).
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
H. F. Lu, L. Fu, G. Jolley, H. H. Tan, S. R. Tatavarti, and C. Jagadish
Applied Physics Letters 98, in press (2011).
Improved performance of GaAs-Based terahertz emitters via surface passivation and silicon nitride encapsulation
C. Headley, L. Fu, P. Parkinson, X. Xu, J. Lloyd-Hughes, C. Jagadish, and M. B. Johnston
IEEE Journal of Selected Topics in Quantum Electronics 17, 17 (2011).
Water droplet motion control on superhydrophobic surfaces: exploiting the Wenzel-to-Cassi transition
G. M. Liu, L. Fu, A. V. Rode, and V. S. J. Craig
Langmui 27, 2595 (2011).
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
I. McKerracher, J. Wong-Leung, G. Jolley, L. Fu, H. H. Tan and C. Jagadish
IEEE Journal of Quantum Electronics 47, 577 (2011).